THÔNG SỐ KỸ THUẬT
|
Symbol |
Parameter |
Conditions |
Min |
Typ/ Nom |
Max |
Unit |
| frange | frequency range | 1 | 1000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 140 | W | |||
|
Test signal: CW |
||||||
| Gp | power gain | VDS = 50 V | 20 | 21 | dB | |
| ηD | drain efficiency | VDS = 50 V;
f = 860 MHz; IDq = 0.5 A |
45 | 49 | % | |
| IMD3 | third-order intermodulation distortion | VDS = 50 V;
IDq = 0.5 A |
-34 | -30 | dBc | |
| IDq | quiescent drain current | VDS = 50 V | 0.5 | A | ||
| PL(PEP) | peak envelope power load power | VDS = 50 V | 140 | W | ||
A 600W LDMOS RF power transistor for DVB-T applications optimised to give most
rugged performance with no compromise in broadband efficiency and gain.
Features and benefits
- Designed for broadband operation (470 MHz to 860 MHz)
- Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
- Extremely high power (P1dB 600W)
- Internal input matching for high gain and optimum broadband operation
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Applications
- Communication transmitter applications in the UHF band
- Industrial applications in the UHF band
