THÔNG SỐ KỸ THUẬT
|
Symbol |
Parameter |
Conditions |
Min |
Typ/Nom |
Max |
Unit |
| frange | frequency range | 470 | 860 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 300 | W | |||
|
Test signal: CW |
||||||
| PL(PEP) | output power | 300 | W | |||
| Gp | power gain | VDS = 42 V;
f1 = 860 MHz f2 = 860.1 MHz; PL(PEP) = 300 W |
18 | 21 | dB | |
| ηD | drain efficiency | VDS = 42 V;
f1 = 860 MHz; IDq = 1400 mA; f2 = 860.1 MHz; PL(PEP) = 300 W |
42 | 46 | % | |
| IMD3 | third-order intermodulation distortion | VDS = 42 V;
IDq = 1400 mA; PL(PEP) = 300 W |
-35 | -31 | dBc | |
A 300 W LDMOS RF power transistor for broadcast transmitter applications
and industrial applications. The transistor can deliver 300 W broadband over the full
UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband
performance of this device makes it ideal for digital transmitter applications.
Features and benefits
- Excellent ruggedness
- High power gain
- Excellent reliability
- High efficiency
- Good thermal stability
- Easy power control
- Integrated ESD protection
- Internal input and output matching
- Advanced flange material for optimum thermal behavior and reliability
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- Communication transmitter applications in the UHF band
- Industrial applications in the UHF band
