NXP BLF647

Mã: BLF647 Danh mục:

Hàng mới 100%, Nhập khẩu từ USA

Estimated Delivery 2 to 3 days

Liên hệ

Gọi ngay: 0259.2222 292

THÔNG SỐ KỸ THUẬT

Symbol

Parameter

Conditions

Min

Typ/Nom

Max

Unit

frange frequency range 1 800 MHz
PL(1dB) nominal output power at 1 dB gain compression 150 W

Test signal: CW

PL output power VDS= 32 V; f = 800 MHz 150 W
Gp power gain f = 800 MHz; VDS = 32 V;

PL = 150 W

12.5 dB
ηD drain efficiency VDS = 32 V; f = 800 MHz;

IDq = 1000 mA; PL = 150 W

60 %
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor
in a SOT540A package with ceramic cap. The common source is connected to the
mounting flange.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on underside eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 800 MHz)
  • Internal input damping for excellent stability over the whole frequency range

Applications

  • Communication transmitter applications in the HF to 800 MHz frequency range