THÔNG SỐ KỸ THUẬT
|
Symbol |
Parameter |
Conditions |
Min |
Typ/Nom |
Max |
Unit |
| frange | frequency range | 1 | 800 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 150 | W | |||
|
Test signal: CW |
||||||
| PL | output power | VDS= 32 V;
f = 800 MHz |
150 | W | ||
| Gp | power gain | f = 800 MHz;
VDS = 32 V; PL = 150 W |
12.5 | dB | ||
| ηD | drain efficiency | VDS = 32 V;
f = 800 MHz; IDq = 1000 mA; PL = 150 W |
60 | % | ||
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
Features and benefits
- Excellent back-off linearity
- Easy power control
- Excellent ruggedness
- High power gain
- Excellent thermal stability
- Designed for broadband operation (HF to 2200 MHz)
- No internal matching for broadband operation
- ESD protection
Applications
- RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations
- Multicarrier applications in the HF to 2200 MHz frequency range
- Broadcast
