THÔNG SỐ KỸ THUẬT
Symbol |
Parameter |
Conditions |
Min |
Typ/Nom |
Max |
Unit |
frange | frequency range | 470 | 860 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 150 | W | |||
Test signal: CW |
||||||
PL | output power | 150 | W | |||
Gp | power gain | VDS = 32 V;
PL = 150 W |
13.5 | 14 | dB | |
ηD | drain efficiency | VDS = 32 V;
f = 860 Hz; IDq = 1000 mA; PL = 150 W |
50 | 60 | % |
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A
package with ceramic cap. The common source is connected to the mounting flange.
Features and benefits
- High power gain
- Easy power control
- Excellent ruggedness
- Designed to withstand abrupt load mismatch errors
- Source on underside eliminates DC isolators; reducing common mode inductance
- Designed for broadband operation (UHF band)
- Internal input and output matching
Applications
- Communication transmitter applications in the UHF frequency range