THÔNG SỐ KỸ THUẬT
|
Symbol |
Parameter |
Conditions |
Min |
Typ/Nom |
Max |
Unit |
| frange | frequency range | 1 | 800 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 150 | W | |||
|
Test signal: CW |
||||||
| PL | output power | VDS= 32 V; f = 800 MHz | 150 | W | ||
| Gp | power gain | f = 800 MHz; VDS = 32 V;
PL = 150 W |
12.5 | dB | ||
| ηD | drain efficiency | VDS = 32 V; f = 800 MHz;
IDq = 1000 mA; PL = 150 W |
60 | % | ||
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor
in a SOT540A package with ceramic cap. The common source is connected to the
mounting flange.
Features and benefits
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing common mode inductance
- Designed for broadband operation (HF to 800 MHz)
- Internal input damping for excellent stability over the whole frequency range
Applications
- Communication transmitter applications in the HF to 800 MHz frequency range
