THÔNG SỐ KỸ THUẬT
|
Symbol |
Parameter |
Conditions |
Min |
Typ/Nom |
Max |
Unit |
| frange | frequency range | 10 | 500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 20 | W | |||
|
Test signal: CW |
||||||
| PL | output power | 20 | W | |||
| Gp | power gain | VDS = 50 V;
IDq = 50 mA; PL = 20 W |
25.5 | 27.5 | 29.5 | dB |
| ηD | drain efficiency | VDS = 50 V;
f = 225 MHz; IDq = 50 mA; PL = 20 W |
67 | 70 | % | |
| IRL | input return loss | VDS = 50 V;
IDq = 50 mA; PL = 20 W |
-13 | -10 | dB | |
A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band.
Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (10 MHz to 500 MHz)
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
Applications
- Broadcast transmitter applications in the HF and VHF band
- Industrial, scientific and medical applications
