The BLF188XR extends NXP Semiconductors’ XR family of ‘eXtremely Rugged’ LDMOS transistors for RF-energy applications, supporting increased output power and helping to simplify design while also enabling lower system cost, replacing traditional VDMOS-based devices, and eliminating the use of hazardous substances.
This latest member of the family is able to withstand severe load mismatches with Voltage Standing-Wave Ratio (VSWR) greater than 65:1 at 3dB of compression. While capable of passing extreme ruggedness testing, the BLF188XR also has the ability to deliver up to 1400W peak output power operating at 50V.
BLF188XR has enhanced integrated ESD protection featuring a new dual-sided ESDdiode structure, which gives a larger negativevoltage range allowing improved Class-C operation making the XR device easy to design-in and fine-tune in a variety of applications.
In addition, excellent linearity allows the BLF188XR to deliver a valuable power and efficiency boost in high-power linear applications such as terrestrial broadcast systems.
BLF188XR is ideal for highpower applications in Industrial, Scientific and Medical (ISM) frequency ranges up to 300MHz, while the popular BLF578XR series is recommended for frequency ranges up to 500MHz.
• Plasma igniters
• Laser systems
• MRI scanners
• FM transmitters
• In-Band On-Channel (IBOC) digital radio
• VHF televisions
• Simplified power control
• High thermal stability
• Gate-source voltage range: -6V to 11V
• 225°C maximum operating junction temperature
• SOT539A bolt-down or SOT539B earless ceramic package options